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Volumn 81, Issue 7, 2002, Pages 1195-1197

Influence of a thin GaAs cap layer on structural and optical properties of InAs quantum dots

Author keywords

[No Author keywords available]

Indexed keywords

CAP LAYERS; CAPPING LAYER; EMISSION WAVELENGTH; GAAS; INAS QUANTUM DOTS; PHOTOLUMINESCENCE SPECTRUM; STRUCTURAL AND OPTICAL PROPERTIES; WAVELENGTH SHIFT;

EID: 79956051001     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1500778     Document Type: Article
Times cited : (75)

References (16)
  • 16
    • 79957939345 scopus 로고    scopus 로고
    • S. M. Wang, F. Ferdos, Y. Q. Wei, Y. Yao, Q. X. Zhao, M. Sadeghi, and A. Larsson (unpublished)
    • S. M. Wang, F. Ferdos, Y. Q. Wei, Y. Yao, Q. X. Zhao, M. Sadeghi, and A. Larsson (unpublished).


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.