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Volumn 82, Issue 25, 2003, Pages 4477-4479

Effect of ingaas capping layer on the properties of InAs/InGaAs quantum dots and lasers

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; GROUND STATE; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR LASERS;

EID: 0038383178     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1585125     Document Type: Article
Times cited : (56)

References (12)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.