Characterization of crack-free AlN/GaN multiple quantum wells grown by metalorganic vapor phase epitaxy using H2 as a carrier gas

Physica Status Solidi (B) Basic Research

Volumn 234, Issue 3, 2002, Pages 961-964

  Waki, I ^a   Kumtornkittikul, C ^b   Sato, K ^b   Shimogaki, Y ^a,b   Nakano, Y ^a,c  

^a JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

^c UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0036925003     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-3951(200212)234:3<961::AID-PSSB961>3.0.CO;2-4     Document Type: Conference Paper

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