InAs/GaAs quantum boxes obtained by self-organized growth: Intrinsic electronic properties and applications

Solid-State Electronics

Volumn 40, Issue 1-8, 1996, Pages 807-814

  Gerard J M ^a   Marzin, J Y ^a   Zimmermann, G ^a   Ponchet, A ^b   Cabrol, O ^a   Barrier, D ^a   Jusserand, B ^a   Sermage, B ^a  

^a ORANGE LABS   (France)

^b CEMES CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; ELECTRON EMISSION; ELECTRONIC PROPERTIES; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; RELAXATION PROCESSES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; ULTRAFAST PHENOMENA;

INHOMOGENEOUS BROADENING; QUANTUM BOXES; SELF ORGANIZED GROWTH; SIZE FLUCTUATIONS; THERMAL ENERGY; THERMOEMISSION; ULTRAFAST CARRIER CAPTURE;

SEMICONDUCTOR QUANTUM WELLS;

EID: 0029700663     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/0038-1101(95)00367-3     Document Type: Article

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