Negative bias temperature instability on three oxide thicknesses (1.4/2.2/5.2 nm) with nitridation variations and deuteration

Microelectronics Reliability

Volumn 45, Issue 1, 2005, Pages 47-56

  Hook, Terence B ^a   Bolam, Ronald ^a   Clark, William ^a   Burnham, Jay ^a   Rovedo, Nivo ^a   Schutz, Laura ^a  

^a IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEUTERIUM; HOT CARRIERS; OXIDATION; PASSIVATION; PLASMAS; SENSITIVITY ANALYSIS; THRESHOLD VOLTAGE;

DRAIN DESIGN; NEGATIVE BIAS TEMPERATURE INSTABILITY (NBTI); NITRIDATION VARIATIONS; POWER SUPPLY;

FIELD EFFECT TRANSISTORS;

EID: 10044265640     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2004.02.016     Document Type: Article

References (9)

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