Fowler-nordheim characteristics of electron irradiated MOS capacitors

IEEE Transactions on Nuclear Science

Volumn 45, Issue 6 PART 1, 1998, Pages 2383-2390

  Candelori, A ^a  

^a UNIVERSITY OF PADOVA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CATHODES; CRYSTAL DEFECTS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CHARGE; ELECTRON IRRADIATION; HOLE TRAPS; INTERFACES (MATERIALS); LINEAR ACCELERATORS; RADIATION EFFECTS;

CAPACITANCE-VOLTAGE CHARACTERISTICS; ELECTRICAL STRESSES; FOWLER-NORDHEIM CHARACTERISTICS;

MOS CAPACITORS;

EID: 0032307019     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.736458     Document Type: Article

References (29)

1. A. Scarpa, G. Ghibaudo, G. Ghidini, G. Pananakakis, and A. Paccagnella.Stress induced degradation features of very thin gate oxides," Microelectron. Reliab., vol. 38, pp. 195-199, 1988.
2. E. Vincent, C. Papadas, and G. Ghibaudo.Temperature dependence of charge build-up mechanisms and breakdown phenomena in thin oxides under FowlerNordheim injection," Microelectron. Reliab., vol. 41, pp.1001-1004, 1997.
3. C. Papadas, G. Ghibaudo, F. Pio, C. Monserie, G. Pananakakis, P. Mortini, and C. Riva.On the charge build-up mechanism in gate dielectrics," Microelectron. Reliab, vol. 37, pp.495-505, 1994.
4. Y. H. Lin, C. L. Lee, and T. F. Lei.Monitoring trapped charge generation for gate oxide under stress," IEEE Trans. Electron. Dev., vol. 44, pp.1441-1446, 1997.
5. R. Rodriguez, M Nafria, J. Sune, and X. Aymerich.Trapped charge distribution in thin (10 nm) SiO2 film subjected to static and dynamic stresses," IEEE Trans. Electron. Dev., vol. 45, pp.881-888, 1998.
6. N. S. Saks, M. G. Ancona, and J. A. Modolo.Radiation effects in MOS capacitors with very thin oxides at 80 °K," IEEE Trans. Nucl. Sei., vol. 31, pp. 1249-1255, 1984.
7. A. Scarpa, A. Paccagnella, F. Montera, G. Ghibaudo, G. Pananakakis, G. Ghidini, and P. G. Fuochi.Ionizing radiation induced leakage current on ultra-thin gate oxides," IEEE Trans. Nucl. Sei., vol. 44, pp.1818-1825, 1997.
8. A. J. Tylka et al., "CREME96: A revision of the cosmic ray effects on micro-electronics code," IEEE Trans. Nucl. Sei, vol. 44, DP.2150-2160, 1997.
9. C. M. Dozier and D. B. Brown.Effect of photon energy on the response of MOS devices," IEEE Trans. Nucl. Sei., vol. 28,pp.4137-4141, 1981.
10. J. M. Aitken.Radiation-induced trapping centers in thin silicon dioxide films," J. Non-Cryst. Solids, vol. 40, pp.31-47, 1980.
11. R. A. B. Devine.Radiation induced structural changes in amorphous SiO-, : I. point defects," Jpn. J. Appl. Phys., vol. 31, pp.4411-4421, 1992.
12. 2 breakdown model for very low voltage lifetime extrapolation," IEEE Trans. Electron. Dev., vol. 41, pp.761-767, 1994.
13. E. Rosenbaum and L. F. Register.Mechanisn of stressinduced leakage current in MOS capacitors," IEEE Trans. Electron. Dev., vol. 44, pp.317-323, 1997.
14. M. Walters and A. Reisman.The distribution of radiation-induced charge defects and neutral electron traps in SiO2, and the threshold voltage shift dependence on oxide thickness," J. Appl. Phys., vol. 67, pp.2992-3002, 1990.
15. N. S. Saks, M. Simsons, D. M. Fleetwood, J. T. Yount, P.M. Lenahan, and R. B. Klein.Radiation effects in oxynitrides grown in N2O," IEEE Trans. Nucl. Sei., vol. 41, pp. 1854-1863, 1994.
16. D. M. Fleetwood and N. S. Saks.Oxide surface and border traps in thermal, N2O and N2O-nitrided oxides," J. Appl. Phys., vol. 79, pp.1583-1594, 1996.
17. J. M. Benedetto and H. E. Boesh.The relashionship between 60Co and 10-keV x-ray damage in MOS devices," IEEE Trans. Nucl. Sei., vol. 33, pp.1318-1323, 1986.
18. M. Lenzlinger and E. H. Snow.Fowler-Nordheim tunneling into thermally grown SiO2," J. Appl. Phys., vol. 40, pp.278-283, 1969.
19. J. M. Benedetto, H. E. Boesh, F. B. McLean, and J. P. Mize.Hole removal in thin-gate MOSFETS by tunneling," IEEE Trans. Nucl. Sei., vol. 32, pp.3916-3920, 1985.
20. 2," IEEE Trans. Nucl. Sei., vol. 24, pp.2128-2134, 1977.
21. H. E. Boesh and J. M. McGarrity.Charge yield and dose effects in MOS capacitors at 80 K," IEEE Trans. Nucl. Sei., vol. 23, pp.1520-1525, 1976.
22. M. Walters and A. Reisman.Radiation-induced neutral electron trap generation in electrically biased insulated gate field effect transistor gate insulators," J. Electrochem. Soc.,vo\. 138, pp.2756-2762, 1991.
23. A. Aassime, G. J. Sarrabayrouse, G. Salace, and C. Petit.Irradiation effects on the high field behaviour of very thin silica layers," Solid-State Electr., vol. 41, pp.945949, 1997.
24. J. M. Aitken, D. R. Young, and K. Pan.Electron trapping in electron-beam irradiated SiO2," J. Appl. Phys., vol. 49, pp.3386-3391, 1978.
25. D. J. DiMaria.Determination of insulator bulk trapped charge densities and centroids from photocurrent-voltage characteristics of MOS structures," J. Appl. Phys., vol. 47, pp.4073-4077, 1976.
26. D. M. Fleetwood.Revised model of thermally stimulated current in MOS capacitors," IEEE Trans. Nucl. Sei., vol. 44, pp.1826-1833, 1997.
27. S. Elrharbi, M. Jourdain, and A. Meinertzhagen.Effect of tunneling electrons in Fowler-Nordheim regime on the current-voltage characteristics and model of degradation of metal-oxide-semiconductor capacitors,".J. Appl. Phys., vol. 76, pp.1013-1020, 1994.
28. P. S. Ku and D. K. Schröder.Charges trapped throughout the oxide and their impact on the FowlerNordheim current in MOS devices," IEEE Trans. Electron. Dev., vol. 41, pp. 1669-1672, 1994.
29. J. K. Rudra and W. B. Fowler.Oxigen vacancy and the E'] center in crystalline SiO2," Physical Review B, vol. 35, pp.8223-8230, 1987.