Linear relationship between H+-trapping reaction energy and defect generation: Insight into nitrogen-enhanced negative bias temperature instability

Applied Physics Letters

Volumn 83, Issue 3, 2003, Pages 530-532

  Tan, Shyue Seng ^a   Chen, T P ^a   Soon, Jia Mei ^b   Loh, Kian Ping ^b   Ang, C H ^c   Teo, W Y ^c   Chan, L ^c  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^c CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; ELECTRON TRAPS; HYDROGEN; IONIZATION; MOSFET DEVICES; POSITIVE IONS; SILICA;

REACTION ENERGY;

NITROGEN;

EID: 0042126721     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1593211     Document Type: Article

References (18)

1. V. Reddy, A. T. Krishnan, A. Marshall, J. Rodriguez, S. Natarajan, T. Rost, and S. Krishnan, International Reliability Physics Symposium (IEEE, Piscataway, 2002), p. 248.
2. P. Chaparala, J. Shibley, and P. Lim, International Reliability Workshop Final Report (IEEE, Piscataway, 2000), p. 95.
3. N. Kimizuka, T. Yamamoto, T. Mogami, K. Yamaguchi, K. Imai, and T. Horiuchi, Symposium on VLSI Technology (IEEE, New York, 1999), p. 73.
4. N. Kimizuka, K. Yamaguchi, K. Imai, T. Iizuka, C. T. Liu, R. C. Keller, and T. Horiuchi, Symposium on VLSI Technology (IEEE, New York, 2000), p. 92.
5. C. H. Liu, M. T. Lee, C. Y. Lin, J. Chen, Y. T. Loh, F. T. Liou, K. Schruefer, A. A. Katsetos, Z. Yang, N. Rovedo, T. B. Hook, C. Wann, and T. C. Chen, Jpn. J. Appl. Phys., Part 1 41, 2423 (2002).
6. S. S. Tan, T. P. Chen, C. H. Ang, and L. Chan, Appl. Phys. Lett. 82, 269 (2003); S. S. Tan, T. P. Chen, C. H. Ang, Y. L. Tan, and L. Chan, Jpn. J. Appl. Phys., Part 2 41, L1031 (2002); C. H. Ang, C. M. Lek, S. S. Tan, B. J. Cho, T. P. Chen, W. Lin, and J. Z. Zhen, Jpn. J. Appl. Phys., Part 2 41, L314 (2002).
7. S. S. Tan, T. P. Chen, C. H. Ang, and L. Chan, Appl. Phys. Lett. 82, 269 (2003); S. S. Tan, T. P. Chen, C. H. Ang, Y. L. Tan, and L. Chan, Jpn. J. Appl. Phys., Part 2 41, L1031 (2002); C. H. Ang, C. M. Lek, S. S. Tan, B. J. Cho, T. P. Chen, W. Lin, and J. Z. Zhen, Jpn. J. Appl. Phys., Part 2 41, L314 (2002).
8. S. S. Tan, T. P. Chen, C. H. Ang, and L. Chan, Appl. Phys. Lett. 82, 269 (2003); S. S. Tan, T. P. Chen, C. H. Ang, Y. L. Tan, and L. Chan, Jpn. J. Appl. Phys., Part 2 41, L1031 (2002); C. H. Ang, C. M. Lek, S. S. Tan, B. J. Cho, T. P. Chen, W. Lin, and J. Z. Zhen, Jpn. J. Appl. Phys., Part 2 41, L314 (2002).
9. S. S. Tan, T. P. Chen, J. M. Soon, K. P. Loh, C. H. Ang, and L. Chan, Appl. Phys. Lett. 82, 1881 (2003).
10. A. D. Becke, J. Chem. Phys. 98, 1372 (1993).
11. C. T. Lee, W. T. Yang, and R. G. Parr, Phys. Rev. B 37, 785 (1988).
12. S. Ogawa, M. Shimaya, and N. Shiono, J. Appl. Phys. 77, 1137 (1995); S. Ogawa and N. Shiono, Phys. Rev. B 51, 4218 (1995).
13. S. Ogawa, M. Shimaya, and N. Shiono, J. Appl. Phys. 77, 1137 (1995); S. Ogawa and N. Shiono, Phys. Rev. B 51, 4218 (1995).
14. T. Hori, in Gate Dielectrics and MOS ULSIs, edited by W. Engl (Springer, Berlin, 1997), Chap. 5, p. 232.
15. N. Yasuda, K. Muraoka, M. Koike, and H. Satake, International Conference on Solid State Devices and Materials (JSAP, Tokyo, 2001), p. 486.
16. G. M. Rignanese, A. Pasquarello, J. C. Charlier, X. Gonze, and R. Car, Phys. Rev. Lett. 79, 5174 (1997).
17. S. Jeong and A. Oshiyama, Phys. Rev. Lett. 86, 3574 (2001).
18. Y. B. Park and D. K. Schroder, IEEE Trans. Electron Devices 45, 1361 (1998).