Atomic modeling of nitrogen neighboring effect on negative bias temperature instability of pMOSFETs

IEEE Electron Device Letters

Volumn 25, Issue 7, 2004, Pages 504-506

  Tan, Shyue Seng ^a   Chen, Tu Pei ^a   Ang, Chew Hoe ^b   Chan, Lap ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; ELECTRONIC STRUCTURE; INTERFACES (MATERIALS); MATHEMATICAL MODELS; NITROGEN COMPOUNDS; PROBABILITY DENSITY FUNCTION; SECONDARY ION MASS SPECTROMETRY; THRESHOLD VOLTAGE;

ATOMIC MODELING; HYBRID GRADIENT CORRECTED DENSITY FUNCTION; NEGATIVE BIAS TEMPERATURE INSTABILITY; NITRIDED OXIDE; NITROGEN NEIGHBORING EFFECT; SEMICONDUCTOR INSULATOR INTERFACES; ULTRATHIN GATE OXIDE;

MOSFET DEVICES;

EID: 3342948721     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2004.831213     Document Type: Article

References (10)

1. N. Kimizuka, T. Yamamoto, T. Mogami, K. Yamaguchi, K. Imai, and T. Horiuchi, "The impact of bias temperature instability for direct-tunneling ultrathin gate oxide on MOSFET scaling," in Symp. VLSI Tech. Dig., 1999, pp. 73-74.
2. N. Kimizuka, K. Yamaguchi, K. Imai, T. Iizuka, C. T. Liu, R. C. Keller, and T. Horiuchi, "NBTI enhancement by nitrogen incorporation into ultrathin gate oxide for 0.10-μm gate CMOS generation," in Symp. VLSI Tech. Dig., 2000, pp. 92-93.
3. C. H. Liu, M. T. Lee, C. Y. Lin, J. Chen, Y. T. Loh, F. T. Liou, K. Schruefer, A. A. Katsetos, A. Yang, N. Rovedo, T. B. Hook, C. Wann, and T. C. Chen, "Mechanism of threshold voltage shift (ΔVth) caused by negative bias temperature instability (NBTI) in deep submicrometer pMOSFETs," Jpn. J. Appl. Phys., vol. 41, pp. 2423-2425, 2002.
4. +-gate pMOSFET with ultra-thin plasma-nitrided gate dieletrics," in Proc. Int. Symp. Plasma Process-Induced Damage, 2002, pp. 146-149.
5. Y. Mitani, M. Nagamine, H. Satake, and A. Toriumi, "NBTI mechanism in ultrathin gate dielectric: Nitrogen-originated mechanism in SiON," in IEDM Tech. Dig., 2002, pp. 509-513.
6. S. S. Tan, T. P. Chen, J. M. Soon, K. P. Loh, C. H. Ang, W. Y. Teo, and L. Chan, "Neighboring effect in nitrogen-enhanced negative bias temperature instability," in Ext. Abstr. Int. Conf. Solid State Devices Materials, 2003, pp. 70-71.
7. A. D. Becke, "A new mixing of Hartree-Fock and local density-functional theories," J. Chem. Phys., vol. 98, pp. 1372-1377, 1993.
8. C. T. Lee, W. T. Yang, and R. G. Parr, "Development of the Colle-Salvetti correlation-energy formula into a functional of the electron density," Phys. Rev. B, Condens. Matter, vol. 37, pp. 785-789, 1988.
9. S. S. Tan, T. P. Chen, J. M. Soon, K. P. Loh, C. H. Ang, and L. Chan, "Nitrogen-enhanced negative bias temperature instability: An insight by experiments and first-principles calculations," Appl. Phys. Lett., vol. 82, pp. 1881-1883, 2003.
10. E. D. Glendening, A. E. Reed, J. E. Carpenter, and F. Weinhold, , Univ. Madison, Madison, WI, NBO Version 3.1, 1995.