Reliability challenges of high performance PD SOI CMOS with ultra-thin gate dielectrics

Solid-State Electronics

Volumn 48, Issue 10-11 SPEC. ISS., 2004, Pages 1703-1708

  Zhao, Eugene ^a   Zhang, John ^a   Salman, Akram ^a   Subba, Niraj ^a   Chan, Jay ^a   Marathe, Amit ^a   Beebe, Stephen ^a   Taylor, Kurt ^a  

^a ADVANCED MICRO DEVICES   (United States)

Author keywords

ESD; HCI; Hot carrier; NBTI; Reliability; SOI; TDDB; Ultra thin gate dielectrics

Indexed keywords

CHARGE CARRIERS; DIELECTRIC MATERIALS; ELECTRIC BREAKDOWN; PARAMETER ESTIMATION; PERMITTIVITY; RELIABILITY; SILICON ON INSULATOR TECHNOLOGY;

ELECTRO-STATIC DISCHARGE STRESS (ESD); HOT CARRIER INJECTION (HCI); TIME DEPENDENT DIELECTRIC BREAKDOWN (TDDB);

CMOS INTEGRATED CIRCUITS;

EID: 3142681846     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2004.05.003     Document Type: Conference Paper

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