Negative bias temperature instability on plasma-nitrided silicon dioxide film

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 41, Issue 3 B, 2002, Pages

  Ang, Chew Hoe ^a   Lek, Chun Meng ^a   Tan, Shyue Seng ^a   Cho, Byung Jin ^a   Chen, Tupei ^b   Lin, Wenhe ^c   Zhen, Jia G ^a  

^a CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^c NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

Interface trap; MOS; Negative bias temperature instability; Thin oxide

Indexed keywords

CAPACITANCE; CARRIER CONCENTRATION; CMOS INTEGRATED CIRCUITS; ELECTRIC POTENTIAL; MOS DEVICES; PLASMA APPLICATIONS; SILICA;

PLASMA NITRIDATION;

ULTRATHIN FILMS;

EID: 0037088521     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.l314     Document Type: Article

References (20)