Impact of Nitrogen on Negative Bias Temperature Instability in p-Channel MOSFETs

Electrochemical and Solid-State Letters

Volumn 6, Issue 12, 2003, Pages

  Houssa, M ^a   Parthasarathy, C ^b   Espreux, N ^a   Autran, J L ^a   Revil, N ^b  

^a AIX MARSEILLE UNIVERSITÉ   (France)

^b STMICROELECTRONICS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BONDING; DEFECTS; DISSOCIATION; ELECTRON TUNNELING; HOLE MOBILITY; NITRIDES; STRAIN; THRESHOLD VOLTAGE;

ELECTRICAL STRESS; INTERFACIAL STRAIN; NEGATIVE BIAS TEMPERATURE INSTABILITY (NBTI);

MOSFET DEVICES;

EID: 0344945620     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1623372     Document Type: Article

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