Local p-type conductivity in zinc oxide dual-doped with nitrogen and arsenic

Applied Physics Letters

Volumn 87, Issue 26, 2005, Pages 1-3

  Krtschil, A ^a   Dadgar, A ^a   Oleynik, N ^a   Blasing J ^a   Diez, A ^a   Krost, A ^a  

^a OTTO VON GUERICKE UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC; CAPACITANCE; DOPING (ADDITIVES); NITROGEN; VAPORIZATION; ZINC OXIDE;

P-TYPE CONDUCTIVITY; SCANNING CAPACITANCE MICROSCOPY; SPATIAL RESOLUTION; THREE-DIMENSIONAL ISLAND GROWTH;

ELECTRIC CONDUCTIVITY;

EID: 29744458578     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2149171     Document Type: Article

References (35)

1. S. J. Pearton, D. P. Norton, K. Ip, Y. W. Heo, and T. Steiner, J. Vac. Sci. Technol. B 22, 932 (2004).
2. D. C. Look and B. Claflin, Phys. Status Solidi B 241, 624 (2004).
3. A. F. Kohan, G. Ceder, D. Morgan, and C. G. Van de Walle, Phys. Rev. B 61, 15019 (2000).
4. C. G. Van de Walle, Phys. Rev. Lett. 85, 1012 (2000).
5. C. H. Park, S. B. Zhang, and S. H. Wei, Phys. Rev. B 66, 073202 (2002).
6. M. G. Wardle, J. P. Goss, and P. R. Briddon, Phys. Rev. B 71, 155205 (2005).
7. D. C. Look, D. C. Reynolds, C. W. Litton, R. L. Jones, D. B. Eason, and G. Cantwell, Appl. Phys. Lett. 81, 1830 (2002).
8. J. Wang, G. Du, B. Zhao, X. Yang, Y. Zhang, Y. Ma, D. Liu, Y. Chang, H. Wang, H. Yang, and S. Yang, J. Cryst. Growth 255, 293 (2003).
9. J. F. Rommeluere, L. Svob, F. Jomard, J. Mimila-Arroyo, A. Lusson, V. Sallet, and Y. Marfaing, Appl. Phys. Lett. 83, 287 (2003).
10. X. Li, Y. Yan, T. A. Gessert, C. L. Perkins, D. Young, C. DeHart, M. Young, and T. J. Coutts, J. Vac. Sci. Technol. A 21, 1342 (2003).
11. A. B. M. A. Ashrafi, I. Suemune, H. Kumano, and S. Tanaka, Jpn. J. Appl. Phys., Part 2 41, L1281 (2002).
12. T. Yamamoto and H. Katayama-Yoshida, Jpn. J. Appl. Phys., Part 2 38, L166 (1999).
13. J. G. Lu, Z. Z. Ye, F. Zhuge, Y. J. Zeng, B. H. Zhao, and L. P. Zhu, Appl. Phys. Lett. 85, 3134 (2004).
14. A. V. Singh, R. M. Mehra, A. Wakahara, and A. Yoshida, J. Appl. Phys. 93, 396 (2003).
15. M. Joseph, H. Tabata, H. Saeki, K. Ueda, and T. Kawai, Physica B 302/303, 140 (2001).
16. L. G. Wang and A. Zunger, Phys. Rev. Lett. 90, 256401 (2003).
17. X. Li, Y. Yan, T. A. Gessert, C. DeHart, C. L. Perkins, D. Young, and T. J. Coutts, Electrochem. Solid-State Lett. 6, C56 (2003).
18. A. Tsukazaki, M. Kubota, A. Ohtomo, T. Onuma, K. Ohtani, H. Ohno, S. F. Chichibu, and M. Kawasaki, Jpn. J. Appl. Phys., Part 2 44, L643 (2005).
19. A. Tsukazaki, T. Onuma, M. Ohtani, T. Makino, M. Sumiya, K. Ohtani, S. F. Chichibu, S. Fuke, Y. Segawa, H. Ohno, H. Koinuma, and M. Kawasaki, Nat. Mater. 4, 42 (2005).
20. A. Dadgar, N. Oleynik, J. Bläsing, S. Deiter, D. Forster, F. Bertram, A. Diez, M. Seip, A. Greiling, J. Christen, and A. Krost, J. Cryst. Growth 272, 800 (2004).
21. A. Krost, J. Christen, N. Oleynik, A. Dadgar, S. Deiter, J. Bläsing, A. Krtschil, D. Forster, F. Bertram, and A. Diez, Appl. Phys. Lett. 85, 1496 (2004).
22. Support notes No. 224 rev. D and No. 289 rev. A, " Scanning capacitance microscopy. " by Digital Instruments/Veeco, Santa Barbara, CA (www.veeco.com).
23. P. de Wolf, E. Brazel, M. Lefevre, and A. Erickson, " Electrical Testing Application Modules for Nanoscope Scanning Probe Microscopes. ", Application Note, Digital Instruments/Veeco, Santa Barbara, CA (www.veeco.com).
24. T. Clarysse, M. Caymax, P. De Wolf, T. Trenkler, W. Vandervorst, J. S. McMurray, J. Kim, C. C. Williams, J. G. Clark, and G. Neubauer, J. Vac. Sci. Technol. B 16, 394 (1998).
25. P. De Wolf, R. Stephenson, T. Trenkler, T. Clarysse, T. Hantschel, and W. Vandervorst, J. Vac. Sci. Technol. B 18, 361 (2000).
26. F. Giannazzo, L. Calcagno, V. Raineri, L. Ciampolini, M. Ciappa, and E. Napoletani, Appl. Phys. Lett. 79, 1211 (2001).
27. J. F. Marchiando and J. J. Kopanski, J. Vac. Sci. Technol. B 22, 411 (2004).
28. K. J. Chao, J. R. Kingsley, R. J. Plano, X. Lu, and I. Ward, J. Vac. Sci. Technol. B 19 1154 (2001).
29. F. Giannazzo, F. Priolo, V. Raineri, and V. Privitera, Appl. Phys. Lett. 76, 2565 (2000).
30. R. N. Kleinman, M. L. O'Malley, F. H. Baumann, J. P. Garno, and G. L. Timp, J. Vac. Sci. Technol. B 18, 2034 (2000).
31. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. (Wiley-Interscience, New York, 1981).
32. E. H. Nicollian and J. R. Brews, MOS (Metal Oxide Semiconductor) Physics and Technology (Wiley-Interscience, New York, 1982).
33. W. K. Chim, K. M. Wong, Y. L. Teo, Y. Lei, and Y. T. Yeow, Appl. Phys. Lett. 80, 4837 (2002).
34. H. Edwards, R. McGlothlin, R. San Martin, E. U. Gribelyuk, M. Gribelyuk, R. Mahaffy, C. K. Chih, R. S. List, and V. A. Ukraintsev, Appl. Phys. Lett. 72, 698 (1998).
35. T. Riemann, J. Christen, B. Beaumont, J.-P. Faurie, and P. Gibart, Superlattices Microstruct. 36, 833 (2004).