|
Volumn 22, Issue 1, 2004, Pages 411-416
|
On calculating scanning capacitance microscopy data for a dopant profile in semiconductors
|
Author keywords
[No Author keywords available]
|
Indexed keywords
APPROXIMATION THEORY;
BOUNDARY CONDITIONS;
CAPACITANCE;
COMPUTER SOFTWARE;
FINITE ELEMENT METHOD;
INVERSE PROBLEMS;
ION IMPLANTATION;
MICROSCOPIC EXAMINATION;
PERMITTIVITY;
POISSON EQUATION;
SCANNING;
DIRICHLET BOUNDARY CONDITIONS;
SCANNING CAPACITANCE MICROSCOPY (SCM);
SEMICONDUCTOR DOPING;
|
EID: 1642377988
PISSN: 10711023
EISSN: None
Source Type: Journal
DOI: 10.1116/1.1619422 Document Type: Conference Paper |
Times cited : (9)
|
References (18)
|