Cluster-doping approach for wide-gap semiconductors: The case of p-type ZnO

Physical Review Letters

Volumn 90, Issue 25 I, 2003, Pages 2564011-2564014

  Wang, L G ^a   Zunger, Alex ^a  

^a NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; OPTOELECTRONIC DEVICES; SEMICONDUCTOR DOPING; ZINC OXIDE;

CLUSTER-DOPING;

SEMICONDUCTOR MATERIALS;

EID: 0043269843     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (28)

1. H. L. Hartnagel, A. L. Dewar, A. K. Jain, and C. Jagadish, Semiconducting Transparent Thin Films (IOP Publishing, Bristol, 1995).
2. E. F. Schubert, Doping in III-V Semiconductors (Cambridge University Press, Cambridge, U.K., 1993).
3. R. Bhargava, Properties of Wide-Gap II-VI Semiconductors (Inspec Publication, London, 1997).
4. C. G. Van de Walle, Phys. Rev. Lett. 85, 1012 (2000).
5. Y. Yan, S. B. Zhang, and S. T. Pantelides, Phys. Rev. Lett. 86, 5723 (2001).
6. T. Yamamoto and H. Katayama-Yoshida, Jpn. J. Appl. Phys. 38, L166 (1999); J. Cryst. Growth 214-215, 552 (2000); Physica (Amsterdam) 302B-303B, 155 (2001).
7. T. Yamamoto and H. Katayama-Yoshida, Jpn. J. Appl. Phys. 38, L166 (1999); J. Cryst. Growth 214-215, 552 (2000); Physica (Amsterdam) 302B-303B, 155 (2001).
8. T. Yamamoto and H. Katayama-Yoshida, Jpn. J. Appl. Phys. 38, L166 (1999); J. Cryst. Growth 214-215, 552 (2000); Physica (Amsterdam) 302B-303B, 155 (2001).
9. E. C. Lee et al., Phys. Rev. B 64, 85120 (2001).
10. F. Oba et al., J. Appl. Phys. 90, 824 (2001).
11. A. F. Kohan et al., Phys. Rev. B 61, 15019 (2000).
12. S. B. Zhang, S. -H. Wei, and A. Zunger, Phys. Rev. B 63, 75205 (2001).
13. C. H. Park, S. B. Zhang, and S.-H. Wei, Phys. Rev. B 66, 73202 (2002).
14. K. Shimomura, K. Nishyama, and R. Kadono, Phys. Rev. Lett 89, 255505 (2002).
15. M. Joseph et al., Jpn. J. Appl. Phys. 38, L1205 (1999); M. Joseph et al., Physica (Amsterdam) 302B-303B, 140 (2001).
16. M. Joseph et al., Jpn. J. Appl. Phys. 38, L1205 (1999); M. Joseph et al., Physica (Amsterdam) 302B-303B, 140 (2001).
17. Y. R. Ryu et al., J. Cryst. Growth 216, 330 (2000).
18. X. Li et al., Electrochem. Solid State 6, c56 (2003); X. Li et al., J. Vac. Sci. Technol. (to be published).
19. X. Li et al., Electrochem. Solid State 6, c56 (2003); X. Li et al., J. Vac. Sci. Technol. (to be published).
20. D. C. Look et al., Appl. Phys. Lett 81, 1830 (2002); in Proceedings of the Second International Workshop on Zinc Oxide, Dayton, Ohio, USA, 2002.
21. D. C. Look et al., Appl. Phys. Lett 81, 1830 (2002); in Proceedings of the Second International Workshop on Zinc Oxide, Dayton, Ohio, USA, 2002.
22. G. F. Neumark, Mater. Sci. Eng. R21, 1 (1997).
23. f were not corrected.
24. S. Gundel and W. Faschinger, Phys. Rev. B 65, 035208 (2002).
25. A. Zunger et al., Modeling Simul. Mater. Sci. Eng. 10, 685 (2002); A. Zunger, Statics and Dynamics of Alloy Phase Transformations, edited by P. E. A. Turchi and A. Gonis (Plenum Press, New York, 1994), p. 361.
26. A. Zunger et al., Modeling Simul. Mater. Sci. Eng. 10, 685 (2002); A. Zunger, Statics and Dynamics of Alloy Phase Transformations, edited by P. E. A. Turchi and A. Gonis (Plenum Press, New York, 1994), p. 361.
27. J. E. Huheey, E. A. Keiter, and R. L Keiter, Inorganic Chemistry: Principles of Structure and Reactivity (Harper Collins College Publishers, New York, 1993), 4th ed., pp. A25-A33.
28. W. A. Harrison, Electronic Structure and the Properties of Solids: the Physics of the Chemical Bond (Dover Publications, Inc., New York, 1989), p. 176.