Heteroepitaxy and nitrogen doping of high-quality ZnO

Journal of Crystal Growth

Volumn 272, Issue 1-4 SPEC. ISS., 2004, Pages 800-804

  Dadgar, A ^a   Oleynik, N ^a   Blasing J ^a   Deiter, S ^a   Forster, D ^a   Bertram, F ^a   Diez, A ^a   Seip, M ^b   Greiling, A ^b   Christen, J ^a   Krost, A ^a  

^a OTTO VON GUERICKE UNIVERSITY   (Germany)

^b Akzo Nobel GmbH Germany   (Germany)

Author keywords

A1. Doping; A3. Metalorganic vapour phase epitaxy; B1. Oxides; B1. Zinc compounds; B2. Semiconducting II VI materials

Indexed keywords

CATHODOLUMINESCENCE; DOPING (ADDITIVES); ELECTRIC PROPERTIES; EPITAXIAL GROWTH; HETEROJUNCTIONS; METALLORGANIC VAPOR PHASE EPITAXY; NITROGEN; OXIDES; SEMICONDUCTOR MATERIALS;

P-N HOMOJUNCTION DEVICES; P-TYPE DOPING; SEMICONDUCTING II-VI MATERIALS; WIDE-GAP SEMICONDUCTORS;

ZINC OXIDE;

EID: 10044265646     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.08.030     Document Type: Conference Paper

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