Erratum to "Crystallization of bismuth titanate and bismuth silicate grown as thin films by atomic layer deposition". [J. Crystal Growth 286 (2006) 376-383] (DOI:10.1016/j.jcrysgro.2005.10.020);Crystallization of bismuth titanate and bismuth silicate grown as thin films by atomic layer deposition

Journal of Crystal Growth

Volumn 286, Issue 2, 2006, Pages 376-383

  Harjuoja, Jenni ^a   Väyrynen, Samuli ^b   Putkonen, Matti ^a   Niinistö, Lauri ^a   Rauhala, Eero ^b  

^a AALTO UNIVERSITY   (Finland)

^b UNIVERSITY OF HELSINKI   (Finland)

Author keywords

A1. Crystal structure; A3. Atomic layer deposition; B1. Bismuth compounds; B1. Oxides; B2. Ferroelectric material

Indexed keywords

BISMUTH COMPOUNDS; CRYSTAL STRUCTURE; CRYSTALLIZATION; DEPOSITION; FERROELECTRIC MATERIALS; OXIDES; STOICHIOMETRY; TITANIUM COMPOUNDS;

ATOMIC LAYER DEPOSITION; ATOMIC RATIO; BISMUTH SILICATE; DEPTH DISTRIBUTION;

THIN FILMS;

EID: 29344463611     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.02.029     Document Type: Erratum

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