New approach to the ALD of bismuth silicates: Bi(CH2SiMe 3)3 acting as a precursor for both bismuth and silicon

Chemical Vapor Deposition

Volumn 11, Issue 8-9, 2005, Pages 362-367

  Harjuoja, Jenni ^a   Hatanpää, Timo ^b   Vehkamäki, Marko ^b   Väyrynen, Samuli ^b   Putkonen, Matti ^a   Niinistö, Lauri ^a   Ritala, Mikko ^b   Leskelä, Markku ^b   Rauhala, Eero ^b  

^a AALTO UNIVERSITY   (Finland)

^b UNIVERSITY OF HELSINKI   (Finland)

Author keywords

ALD; Atomic layer deposition; Bismuth silicate; Crystal structure; Thin films

Indexed keywords

ANNEALING; BISMUTH COMPOUNDS; CARBON; CRYSTAL STRUCTURE; DEPOSITION; HYDROGEN; SYNTHESIS (CHEMICAL);

ATOMIC LAYER DEPOSITION (ALD); BISMUTH SILICATES; POST-SYNTHETIC ANNEALING;

THIN FILMS;

EID: 27944503567     PISSN: 09481907     EISSN: None     Source Type: Journal    
DOI: 10.1002/cvde.200506378     Document Type: Article

References (35)

1. T. Kijima, H. Matsunaga, Jpn. J. Appl. Phys., Part 1 1998, 37, 5171.
2. M. Yamaguchi, K. Hiraki, T. Homma, T. Nagatomo, Y. Masuda, IEEE Int. Symp. Appl. Ferroelectrics 2001, p. 629.
3. T. Kijima, Integrated Ferroelectrics 1999, 26, 93.
4. T. Kijima, H. Matsunaga, Jpn. J. Appl. Phys., Part 1 1999, 38, 2281.
5. M. Yamaguchi, T.Nagatomo, Y.Masuda, Jpn. J. Appl. Phys., Part 1 2001, 40, 5559.
6. J. Kim, T. Tsurumi, T. Kamiya, M. Daimon, J. Appl. Phys. 1994, 75, 2924.
7. K. Nomura, H. Ogawa, J. Electrochem. Soc. 1991, 138, 3696.
8. E. O. Klebanskii, A. Yu. Kudzin, V. M. Pasalskii, S. N. Plyaka, L. Ya. Sadovskaya, G. Kh. Sokolyanskii, Phys. Solid State 1999, 41, 913.
9. L. Escobar-Alarcon, E. Haro-Poniatowski, M. Fernandez-Guasti, A. Perea, C. N. Afonso, T. Falcon, Appl. Phys. A 1999, 69, S949.
10. M. Jain, A. K. Tripathi, T. C. Goel, P. K. C. pillai, J. Mater. Sci. Lett. 1999, 18, 479.
11. M. Yamaguchi, T. Nagamoto, Y. Masuda, IEEE Int. Symp. Appl. Ferroelectrics 2002, p. 231.
12. J. Kim, T. Tsurumi, H. Hirano, T. Kamiya, N. Mizutani, M. Daimon. Jpn. J. Appl. Phys., Part 1 1993, 32, 135.
13. M. Ritala, M. Leskelä, in Handbook of Thin Film Materials, Vol. 1, (Ed: H. S. Nalwa). Academic Press, San Diego, CA 2002, Ch. 2.
14. L. Niinistö, M. Ritala, M. Leskelä, Mater. Sci. Eng. B 1996, 41, 23.
15. L. Niinistö, J. Päiväsaari, J. Niinistö, M. Putkonen, M. Nieminen Phys. Status Solidi A 2004, 201, 1443.
16. K. Kukli, M. Ritala, M. Leskelä, T. Sajavaara, J. Keinonen, D. C. Gilmer, P. J. Tobin, Mater. Sci. Eng. B 2004, 109, 2.
17. R. G. Gordon. J. Becker, D. Hausmann, S. Suh, Chem. Mater. 2001, 13, 2463.
18. S. Morishita, Y. Uchida, M. Matsumura, Jpn. J. Appl. Phys., Part 1 1995, 34, 5738.
19. J.-H. Boo, S.-B. Lee, S.-J. Ku, W. Koh, C. Kim, K.-S. Yu, Y. Kim, Appl. Surf. Sci. 2001, 169-170, 581.
20. W. C. Shin, S. O. Ryu, I. K. You, S. M. Yoon, S. M. Cho, N. Y. Lee, K. D. Kim, B. G. Yu, W. J. Lee, K. J. Choi, S. G. Yoon, Electrochem. Solid-State Lett. 2004, 7, F31.
21. M. Vehkamäki, M. Ritala, M. Leskelä, A. C. Jones, H. O. Davies, T. Sajavaara, E. Rauhala, J. Electrochem. Soc. 2004, 151, F69.
22. M. Ritala, K. Kukli, A. Rahtu, P. Räisänen, M. Leskelä, T. Sajavaara, J. Keinonen, Science 2000, 288, 319.
23. D. Seyferth, J. Am. Chem. Soc. 1958, 80, 1336.
24. B. Murray, J. H. Hvoslef, P. P. Power, Inorg. Chem. 1983, 22, 3421.
25. G. Melin, T. Chartier, J. P. Bonnet, J. Eur. Ceram. Soc. 2000, 20, 45.
26. R. Büngener, W. Pamler, U. Gösele, Mater. Sci. Semicond. Proc. 2003, 6, 43.
27. M. Saljoughian, Monatsh. Chem. 1984, 115, 519.
28. G. M. Sheldrick, SADABS, Program for Empirical Absorption Correction of Area Detector Data. University of Göttingen, Germany 1996.
29. A. Altomare, M. C. Burla, M. Camalli, G. Cascarano, C. Giacovazzo. A. Guagliardi, A. G. G. Moliterni, G. Polidori, R. Spagna, J. Appl. Cryst. 1999, 32, 115.
30. G. M. Sheldrick, SHELXL-97, Program for the Refinement of Crystal Structures, University of Göttingen. Germany, 1997.
31. G. M. Sheldrick. SHELXTL-Plus, Release 5.03: Siemens Analytical X-ray Instruments Inc., Madison, WI, 1994.
32. M. Ylilammi, T. Ranta-aho, Thin Solid Films 1993, 232, 56.
33. UniQnt Version 2 User Manual, Omega Data Systems, Neptunus 2, NL-5505 Velhoven, The Netherlands 1995.
34. J. Saarilahti and E. Rauhala. Nucl. Instrum. Methods B 1992, 64, 734.
35. J. Jokinen, J. Keinonen, P. Tikkanen, A. Kuronen, K. Alhgren, K. Norlund, Nucl. Instrum. Methods B 1996, 119, 533.