Preparation of Bi4Ti3O12 thin films by MOCVD method and electrical properties of metal/ferroelectric/insulator/semiconductor structure

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 4 B, 1999, Pages 2281-2284

  Kijima, Takeshi ^a   Matsunaga, Hironori ^a  

^a SHARP CORPORATION   (Japan)

Author keywords

Bi2SiO5; Bi4Ti3O12; Bismuth silicate; Ferroelectric thin film; MF(I)S FET; MOCVD

Indexed keywords

EID: 0000099056     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.2281     Document Type: Article

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