Atomic Layer Deposition (ALD) of bismuth titanium oxide thin films using Direct Liquid Injection (DLI) method

Integrated Ferroelectrics

Volumn 59, Issue , 2003, Pages 1483-1489

  Cho, Young Jin ^a   Min, Yo Sep ^a   Lee, Jung Hyun ^a   Seo, Bum Seok ^a   Lee, June Key ^a   Park, Young Soo ^a   Choi, Jin Hak ^a  

^a Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

ALD; Bismuth titanium oxide; Dielectric constant; Fram, hysteresis loop; Leakage current; Vaporizer

Indexed keywords

BISMUTH COMPOUNDS; DEPOSITION; FERROELECTRIC DEVICES; HYSTERESIS; LEAKAGE CURRENTS; PERMITTIVITY; RANDOM ACCESS STORAGE; RUTHENIUM;

ATOMIC LAYER DEPOSITION (ALD); BISMUTH TITANIUM OXIDE THIN FILMS; DIRECT LIQUID INJECTION (DLI); SILICON SUBSTRATES; VAPORIZER;

FERROELECTRIC THIN FILMS;

EID: 9144237395     PISSN: 10584587     EISSN: 16078489     Source Type: Conference Proceeding    
DOI: 10.1080/714040810     Document Type: Article

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