New low-temperature processing of metalorganic chemical vapor deposition-Bi4Ti3O12 thin films using BiOx buffer layer

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 1, 1999, Pages 127-130

  Kijima, Takeshi ^a   Ushikubo, Maho ^a   Matsunaga, Hironori ^a  

^a SHARP CORPORATION   (Japan)

Author keywords

Bi4Ti3O12 thin film; BiOx buffer layer; Orientation control; Solid phase reaction; Strain relaxation

Indexed keywords

ANNEALING; BISMUTH COMPOUNDS; CRYSTAL ORIENTATION; DIELECTRIC FILMS; ELECTRIC PROPERTIES; FERROELECTRIC MATERIALS; HYSTERESIS; LOW TEMPERATURE OPERATIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGY; SCANNING ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

BUFFER LAYER; ELECTRON PROBE MICROANALYSIS; FILM THICKNESS; STRAIN RELAXATION;

THIN FILMS;

EID: 0032633756     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.38.127     Document Type: Article

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