Ferroelectric properties of Bi4Ti3O12 thin films prepared on TiO2 anatase layer

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 9 B, 2004, Pages 6585-6589

  Higuchi, Tohru ^a   Nakamura, Makoto ^a   Hachisu, Yuji ^a   Saitoh, Masanori ^a   Hattori, Takeshi ^a   Tsukamoto, Takeyo ^a  

^a TOKYO UNIVERSITY OF SCIENCE   (Japan)

Author keywords

Bi4Ti3O12 (BIT); Initial nucleation; Interface; MOCVD; Remanent polarization (Pr); Thin film; TiO 2 anatase

Indexed keywords

BISMUTH COMPOUNDS; FERROELECTRICITY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PERMITTIVITY; RANDOM ACCESS STORAGE; SCANNING ELECTRON MICROSCOPY; TITANIUM DIOXIDE;

BI4TI3O12 (BIT); INITIAL NUCLEATION; REMANENT POLARIZATION (PR); TIO2 ANATASE;

THIN FILMS;

EID: 10444245783     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.6585     Document Type: Conference Paper

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