Leakage current and ferroelectric memory in Nd and Sm substituted Bi 4Ti3O12 films

Microelectronics Journal

Volumn 36, Issue 3-6, 2005, Pages 574-577

  Tomar, M S ^a   Melgarejo, R E ^a   Singh, S P ^a  

^a UNIVERSITY OF PUERTO RICO   (Puerto Rico)

Author keywords

Ferroelectric memory; Leakage current; Rare earth substituted bismuth titanate

Indexed keywords

CURRENT DENSITY; FERROELECTRIC DEVICES; PEROVSKITE; RARE EARTH COMPOUNDS; SOL-GELS; THIN FILMS;

DIPOLE FORMATION; FERROELECTRIC MEMORY; RARE EARTH SUBSTITUTED BISMUTH TITANATE;

LEAKAGE CURRENTS;

EID: 29344472420     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2005.02.088     Document Type: Conference Paper

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