Fabrication of a depletion mode GaAs MOSFET using Al2O3 as a gate insulator through the selective wet oxidation of AlAs

Thin Solid Films

Volumn 360, Issue 1-2, 2000, Pages 229-232

  Jun, Bon Keun ^a   Kim, Dong Hwan ^a   Leem, Jae Young ^b   Lee, Jung Hee ^a   Lee, Yong Hyun ^a  

^a Kyungpook National University   (South Korea)

^b Korea Research Institute of Standards and Science   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ELECTRON DIFFRACTION; FABRICATION; MOLECULAR BEAM EPITAXY; MOSFET DEVICES; OXIDATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

BUFFER LAYER; DEPLETION MODE; GATE INSULATOR; SELECTIVE WET OXIDATION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0034140214     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(99)00727-0     Document Type: Article

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