Space-charge-limited currents in la2O3 thin films deposited by E-beam evaporation after low temperature dry-nitrogen annealing

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 6 A, 2005, Pages 4032-4042

  Kim, Yongshik ^a   Ohmi, Shun Ichiro ^a   Tsutsui, Kazuo ^a   Iwai, Hiroshi ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Conduction; Dry nitrogen annealing; High k; La2O3 E beam; Rare earth oxide; Space charge limited

Indexed keywords

ANNEALING; ELECTRIC CHARGE; ELECTRIC CONDUCTANCE; ELECTRIC CURRENTS; ELECTRON BEAMS; EVAPORATION; LANTHANUM COMPOUNDS; LEAKAGE CURRENTS; PERMITTIVITY; SEMICONDUCTOR MATERIALS;

DRY-NITROGEN ANNEALING; HIGH-K; LA2O3E-BEAM; RARE EARTH OXIDE; SPACE-CHARGE-LIMITED;

CAPACITORS;

EID: 23944443228     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.44.4032     Document Type: Article

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