Electronic transport properties of nitrogen doped amorphous carbon films deposited by the filtered cathodic vacuum arc technique

Journal of Physics Condensed Matter

Volumn 10, Issue 41, 1998, Pages 9293-9302

  Shi, X ^a   Fu, H ^a   Shi, J R ^a   Cheah, L K ^a   Tay, B K ^a   Hui, P ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; CHEMICAL ACTIVATION; DEPOSITION; ENERGY GAP; FERMI LEVEL; NITROGEN; THIN FILMS; VACUUM APPLICATIONS;

CARBON FILMS; CATHODIC VACUUM ARC TECHNIQUE; THERMAL ACTIVATION MEASUREMENT; VARIABLE RANGE HOPPING;

ELECTRON TRANSPORT PROPERTIES;

EID: 0032181367     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/10/41/011     Document Type: Article

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