Low-temperature conduction mechanisms of 3-nm-thick post-soft breakdown SiO2 films

Journal De Physique. IV : JP

Volumn 12, Issue 3, 2002, Pages

  Komiya, K ^a   Omura, Y ^a   Oka, T ^a   Nagahara, M ^a  

^a KANSAI UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; CURRENT DENSITY; ELECTRIC BREAKDOWN; GATES (TRANSISTOR); HEAT CONDUCTION; LEAKAGE CURRENTS; LOW TEMPERATURE OPERATIONS; SEMICONDUCTING FILMS; THRESHOLD VOLTAGE;

POST SOFT BREAKDOWN; SPACE CHARGE LIMITED CONDUCTION; VARIABLE RANGE HOPPING CONDUCTION;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0036563736     PISSN: 11554339     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1051/jp420020045     Document Type: Conference Paper

References (7)