Electrical behavior of silicon nitride sputtered thin films

Thin Solid Films

Volumn 459, Issue 1-2, 2004, Pages 195-199

  Vila, M ^a   Prieto, C ^a   Ramirez R ^b  

^a INSTITUTO DE CIENCIA DE MATERIALES DE MADRID   (Spain)

^b UNIVERSIDAD CARLOS III DE MADRID   (Spain)

Author keywords

Insulator conduction mechanism; Silicon nitride thin films; Sputtering

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTRIC INSULATORS; ELECTRIC SPACE CHARGE; HYDROGEN; LOW TEMPERATURE EFFECTS; OHMIC CONTACTS; SILICON NITRIDE; SPUTTERING; STOICHIOMETRY;

ELECTRICAL CHARACTERIZATION; INSULATOR CONDUCTION MECHANISMS;

THIN FILMS;

EID: 2942555021     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2003.12.082     Document Type: Conference Paper

References (19)

1. Ouacha A., Willander M., Hammarlund B., Logan R.A. J. Appl. Phys. 74:1993;5602.
2. Shi L., Steenberger A.M., de Vreede A.H., Smit M.K., Scholtes T.L.M., Groen F.H., Pedersen J.W. J. Vac. Sci. Technol. A. 14:1996;471.
3. Lapeyrade M., Besland M.P., Meva'a C., Sibai A., Hollinger G. J. Vac. Sci. Technol. 17:1999;433.
4. Hugon M.C. J. Vac. Sci. Technol. 17:1999;1430.
5. Dodabalapur A., Rothberg L.J., Miller T.M., Kwock E.W. Appl. Phys. Lett. 64:1994;2486.
6. Shokrani M., Kapoor V.J. Plasma properties, deposition and etching. Pouch J.J., Alterovitz S.A. Materials Science Forum. 140-142:1993;Trans Tech Publications, Aadermannsdorf, Switzerland.
7. Löbl H.P., Huppertz M. Thin Solid Films. 317:1998;153.
8. Awan S.A., Gould R.D., Gravano S. Thin Solid Films. 355-356:1999;456.
9. Lambrinos M.F., Valizadeh R., Colligon J.S. Appl. Optics. 35:1996;3620.
10. Lustig N., Kanicki J. J. Appl. Phys. 65:1989;3951.
11. Chen F., Li B., Dufresne R.A., Jammy R. J. Appl. Phys. 90:1898;2001.
12. Yang H.Y., Niimi N., Lucovsky G. J. Appl. Phys. 83:1998;2327.
13. De Salvo B., Ghibando G., Pananakakis G., Guillaumat B., Reimbold G. J. Appl. Phys. 86:1999;2751.
14. Savall C., Bruyère J.C., Stoquert J.P. Thin Solid Films. 260:1995;174.
15. Löbl H.P., Huppertz M. Thin Solid Films. 317:1998;153.
16. Vila M., Prieto C., Garcia-Lopez J., Respaldiza M.A. Nucl. Instrum. Method B. 211:2003;199.
17. Osendi M.I., de Pablos A., Miranzo P. Mater. Sci. Eng. A. 308:2001;53.
18. Alpuim P., Ferreira P., Chu V., Conde J.P. J. Non-Cryst. Solids. 299-302:2002;434.
19. Karcher R., Ley L., Jonson R.L. Phys. Rev. B. 60:1898;1984.