Characterization of soft breakdown in thin oxide NMOSFETs based on the analysis of the substrate current

IEEE Transactions on Electron Devices

Volumn 48, Issue 6, 2001, Pages 1109-1113

  Crupi, Felice ^a   Iannaccone, Giuseppe ^b   Crupi, Isodiana ^c   Degraeve, Robin ^d   Groeseneken, Guido ^d,e   Maes, Herman E ^d,e  

^a UNIVERSITY OF MESSINA   (Italy)

^b UNIVERSITY OF PISA   (Italy)

^c CNR   (Italy)

^d IMEC   (Belgium)

^e IEEE   (United States)

Author keywords

Dielectric breakdown; Leakage currents; MOSFETs; Reliability

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRON TRAPS; ELECTRON TUNNELING; GATES (TRANSISTOR); LEAKAGE CURRENTS; SUBSTRATES; THRESHOLD VOLTAGE;

SOFT BREAKDOWN (SBD);

MOSFET DEVICES;

EID: 0035367152     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.925235     Document Type: Article

References (15)

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