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Volumn 68, Issue 15, 1996, Pages 2058-2060
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Stable and efficient electroluminescence from a porous silicon-based bipolar device
a a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
ANNEALING;
CHEMICAL VAPOR DEPOSITION;
CURRENT DENSITY;
CURRENT VOLTAGE CHARACTERISTICS;
ELECTRIC CONDUCTIVITY;
ELECTROLUMINESCENCE;
HIGH TEMPERATURE OPERATIONS;
LIGHT MODULATION;
NITROGEN;
PHOTOLUMINESCENCE;
POROUS SILICON;
LIGHT EMITTING DEVICES;
LIGHT EMITTING POROUS SILICON;
LOW PRESSURE CHEMICAL VAPOR DEPOSITION;
LUMINESCENCE INTENSITY;
SQUARE WAVE CURRENT PULSE;
BIPOLAR SEMICONDUCTOR DEVICES;
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EID: 0030574987
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.116302 Document Type: Article |
Times cited : (144)
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References (16)
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