Charge transport after hard breakdown in gate oxides

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 4 B, 2002, Pages 2431-2436

  Bearda, T ^a   Woerlee, P H ^b   Wallinga, H ^b   Heyns, M M ^a  

^a IMEC   (Belgium)

^b UNIVERSITY OF TWENTE   (Netherlands)

Author keywords

Breakdown spot; Diode; Hard Breakdown; Point contact; Spreading resistance

Indexed keywords

CAPACITORS; CHARGE TRANSFER; POINT CONTACTS; SEMICONDUCTOR DIODES; SUBSTRATES;

BREAKDOWN SPOT; HARD BREAKDOWN; SPREADING RESISTANCE;

GATES (TRANSISTOR);

EID: 0346519675     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.41.2431     Document Type: Article

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