Characterization and modeling of the tunneling current in Si-SiO2-Si structures with ultra-thin oxide layer

Microelectronic Engineering

Volumn 59, Issue 1-4, 2001, Pages 127-136

  Ghetti, Andrea ^a  

^a STMICROELECTRONICS   (Italy)

Author keywords

Quantum mechanical effects; Trap assisted tunneling; Tunneling current; Ultra thin oxide

Indexed keywords

ELECTRIC CURRENTS; ELECTRON TRAPS; ELECTRON TUNNELING; MATHEMATICAL MODELS; QUANTUM THEORY; SEMICONDUCTING SILICON; SILICA; ULTRATHIN FILMS;

TUNNELING CURRENTS;

MOS DEVICES;

EID: 0035498690     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0167-9317(01)00656-6     Document Type: Conference Paper

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