Analysis of variation in leakage currents of Lanthana thin films

Solid-State Electronics

Volumn 49, Issue 5, 2005, Pages 825-833

  Kim, Yongshik ^a   Ohmi, Shun Ichiro ^a   Tsutsui, Kazuo ^a   Iwai, Hiroshi ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Conduction; E beam; Fowler Nordheim; High k; La2O3; Space charge limited

Indexed keywords

ELECTRIC FIELD EFFECTS; ELECTRIC SPACE CHARGE; ELECTRON BEAMS; ELLIPSOMETRY; HEAT CONDUCTION; LANTHANUM COMPOUNDS; LEAKAGE CURRENTS; POROUS SILICON; TEMPERATURE MEASUREMENT;

CONDUCTION; FOWLER-NORDHEIM; HIGH-K; LA2O3; SPACE-CHARGE LIMITED;

THIN FILMS;

EID: 14844295022     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2005.01.022     Document Type: Conference Paper

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