Electrical characteristics of Ti-O/Ta2O5 thin film sputtered on Ta/Ti/Al2O3 substrate

Thin Solid Films

Volumn 446, Issue 1, 2004, Pages 124-127

  Kim, Hyun Ju ^a   Song, Jae Sung ^b   Kim, In Sung ^b   Kim, Sang Su ^a  

^a Changwon National University   (South Korea)

^b Korea Electrotechnology Research Institute (KERI)   (South Korea)

Author keywords

Al2O3 substrate; Conduction mechanism; Thin film capacitor; Ti O buffer layer

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; CAPACITORS; CRYSTALLIZATION; CURRENT DENSITY; DIELECTRIC FILMS; ELECTRIC CONDUCTIVITY; ELECTRIC FIELDS; ELECTRIC POTENTIAL; ELECTRIC SPACE CHARGE; LEAKAGE CURRENTS; PERMITTIVITY; RAPID THERMAL ANNEALING; SCANNING ELECTRON MICROSCOPY; SUBSTRATES; X RAY DIFFRACTION;

FILM THICKNESS; LIMITED CURRENT MECHANISM; REACTIVE SPUTTERING;

THIN FILMS;

EID: 0347412029     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(03)01306-3     Document Type: Article

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