Physical and reliability characteristics of Hf-based gate dielectrics on strained-Si1-xGex MOS devices

IEEE Transactions on Device and Materials Reliability

Volumn 5, Issue 2, 2005, Pages 168-176

  Tzeng, Pei Jer ^a   Maikap, Siddheswar ^a   Chen, Peng Shiu ^a   Chou, Yu Wei ^a   Liang, Chieh Shuo ^a   Lee, Lurng Shehng ^a  

^a INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

Crystallization; Hafnium oxide; Hafnium silicate; High ; MOSFET; Post deposition annealing; Reliability; Silicon nitride; Strained SiGe

Indexed keywords

ANNEALING; CRYSTALLIZATION; DIELECTRIC MATERIALS; ELECTRIC POTENTIAL; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; LEAKAGE CURRENTS; MOSFET DEVICES; RELIABILITY; SEMICONDUCTING SILICON COMPOUNDS; SILICON NITRIDE; THERMODYNAMIC STABILITY; THIN FILMS; TRANSCONDUCTANCE; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

DRAIN CURRENT; HAFNIUM OXIDE; HAFNIUM SILICATE; HIGH-K; POST DEPOSITION ANNEALING; STRAINED-SIGE;

MOS CAPACITORS;

EID: 23844516752     PISSN: 15304388     EISSN: None     Source Type: Journal    
DOI: 10.1109/TDMR.2005.846975     Document Type: Conference Paper

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