Electrical properties and reliability of HfO2 deposited via ALD using Hf(NO3)4 precursor

IEEE International Integrated Reliability Workshop Final Report

Volumn 2002-January, Issue , 2002, Pages 108-112

  Conley, J F ^a   Ono, Y ^a   Zhuang, W ^a   Stecker, L ^a   Stecker, G ^a  

^a SHARP LABORATORIES OF AMERICA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHLORINE COMPOUNDS; DIELECTRIC MATERIALS; HAFNIUM OXIDES; SILICA; SILICON WAFERS; THIN FILMS;

ATOMIC-LAYER DEPOSITION; BULK DIELECTRIC; DEPOSITION PRECURSORS; EFFECTIVE DIELECTRIC CONSTANTS; ELECTRICAL RELIABILITY; INTERFACIAL LAYER; INTERFACIAL-LAYER THICKNESS; SIO 2 LAYER; THIN-FILMS; UNIFORM DEPOSITION;

ATOMIC LAYER DEPOSITION;

EID: 33645363777     PISSN: 19308841     EISSN: 23748036     Source Type: Conference Proceeding    
DOI: 10.1109/IRWS.2002.1194244     Document Type: Conference Paper

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