Post deposition annealing effects on the reliability of ALD HfO2 films on strained-Si0.8Ge0.2 layers

Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA

Volumn , Issue , 2004, Pages 29-32

  Tzeng, P J ^a   Maikap, S ^b   Lai, W Z ^b   Liang, C S ^a   Chen, P S ^a   Lee, L S ^a   Liu, C W ^b  

^a INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

^b NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; CMOS INTEGRATED CIRCUITS; CRYSTALLIZATION; DIELECTRIC FILMS; DIELECTRIC MATERIALS; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; INTERFACES (MATERIALS); NANOSTRUCTURED MATERIALS; RELIABILITY; SILICON COMPOUNDS; STRAIN; ULTRAHIGH VACUUM; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

ATOMIC LAYER DEPOSITION (ALD); ELECTRICAL DEGRADATION; INTERFACIAL OXIDES; NANOSTRUCTURE STABILITY;

MOS DEVICES;

EID: 14844320813     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

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