MOS-diode characteristics with HfO2 gate insulator deposited by ECR sputtering

Journal of the Electrochemical Society

Volumn 151, Issue 5, 2004, Pages

  Saito, Kunio ^a   Jin, Yoshito ^a   Shimada, Masaru ^a  

^a NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC INSULATORS; ELECTRON CYCLOTRON RESONANCE; GATES (TRANSISTOR); MAGNETRON SPUTTERING; METALLIZING; OPTIMIZATION; QUANTUM THEORY; SUBSTRATES;

BANDGAP ENERGY; CAPACITANCE EQUIVALENT THICKNESS (CET); ELECTRON CYCLOTRON RESONANCE SPUTTERING; GATE INSULATORS;

MOS DEVICES;

EID: 2942536010     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1688342     Document Type: Article

References (26)

1. G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys., 89, 5243 (2001).
2. S. J. Lee, H. F. Luan, W. P. Bai, C. H. Lee, T. S. Jeon, Y. Senzaki, D. Roberts, and D. L. Kwong, Tech. Dig. - Int. Electron Devices Meet., 2000, 31.
3. S. J. Lee, T. S. Jeon, D. L. Kwong, and R. Clark, J. Appl. Phys., 92, 2807 (2002).
4. J. F. Conley, R. Solanki, G. Stecker, L. Chameski, W. Zhuang, D. Tweet, L. Stecker, W. Gao, and Y. Ono, in Proceedings of the AVS Topical Conference on Atomic Layer Deposition 2002, Aug 19-21, 2002, Seoul, Korea, American Vacuum Society.
5. K. Yamamoto, S. Hayashi, M. Niwa, M. Asai, S. Horii, and H. Miya, Appl. Phys. Lett., 83, 2229 (2003).
6. B. H. Lee, L. Kang, R. Nieh, W.-J. Qi, and I. C. Lee, Appl. Phys. Lett., 16, 1926 (2000).
7. L. Kang, K. Onishi, Y. Jeon, B. H. Lee, C. Kang, W.-J. Qi, R. Nieh, S. Gopalan, R. Choi, and J. C. Lee, Tech. Dig. - Int. Electron Devices Meet., 2000, 35.
8. H. Harris, K. Choi, N. Mehta, A. Chandolu, N. Biswas, G. Kipshidze, S. Nikishin, S. Gangopadhyay, and H. Temkin, Appl. Phys. Lett., 81, 1065 (2002).
9. K. Saito, Y. Jin, T. Amazawa, and T. Ono, in Semiconductor Technology M. Yang, Editor, PV 2001-17, p. 346, The Electrochemical Society Proceedings Series, Pennington, NJ (2001).
10. Y. Jin, K. Saito, and M. Shimada, J. Vac. Sci. Technol. B, 21, 942 (2003).
11. J.-D. Kim, S. Kawagoe, K. Sasaki, and T. Hata, Jpn. J. Appl. Phys., Part 1, 38, 6882 (1999).
12. H. Watanabe, Appl. Phys. Lett., 78, 3803 (2001).
13. K. Saito, Y. Jin, and M. Shimada, Appl. Phys. Lett., 81, 3582 (2002).
14. International Technology Roadmap for Semiconductors (ITRS), http://www.itrs.net/
15. S. M. Sze, Physics of Semiconductor Devices, 2nd ed., pp. 26, 392, 403, Wiley & Sons, New York (1969).
16. J. Robertson, J. Vac. Sci. Technol. B, 18, 1785 (2000).
17. S. Sayan, E. Garfunkel, and S. Suzer, Appl. Phys. Lett., 80, 2135 (2002).
18. V. V. Afanas'ev, A. Stesmans, F. Chen, X. Shi, and S. A. Campbell, Appl. Phys. Lett., 81, 1053 (2002).
19. W. J. Zhu, T.-P. Ma, T. Tamagawa, J. Kim, and Y. Di, IEEE Electron Device Lett., 23, 97 (2002).
20. F. Stern, Phys. Rev. B, 5, 4891 (1972).
21. E. D. Castro and P. Olivo, Phys. Status Solidi, 132, 153 (1985).
22. J. R. Hauser and K. Ahmed, AIP Conf. Proc., 449, 235 (1998).
23. J. C. Inkson, J. Phys. C, 6, 1350 (1973).
24. P. W. Anderson, in Elementary Excitations in Solid, Molecules, and Atoms, Part A, p. 1, Nato Advanced Study Institute Series, Plenum Press, New York (1974).
25. Y. Murata, K. Nagata, H. Fujimoto, T. Sakurai, M. Okada, and Y. Ebe, J. Phys. Soc. Jpn., 70, 793 (2001).
26. I. Costina and R. Franchy, Appl. Phys. Lett., 78, 4193 (2001).