Analysis of Charge Trapping and Breakdown Mechanism in High-K Dielectrics with Metal Gate Electrode Using Carrier Separation

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 2003, Pages 927-930

  Loh, Wei Yip ^a   Cho, Byung Jin ^a   Joo, Moon Sig ^a   Li, M F ^a,b   Chan, Daniel S H ^a   Mathew, Shajan ^b   Kwong, Dim Lee ^c  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

^c The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER SEPARATION; CONSTANT VOLTAGE STRESSING (CVS); NITRIDATION;

ELECTRIC CHARGE; ELECTRON TRAPS; GATES (TRANSISTOR); LEAKAGE CURRENTS; MOSFET DEVICES; NITRIDES; SILICA; STRESS ANALYSIS; SUBSTRATES; WEIBULL DISTRIBUTION;

DIELECTRIC MATERIALS;

EID: 0842288136     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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