Nitrogen and phosphorus implanted MESFETs in semi-insulating 4H-SiC

Diamond and Related Materials

Volumn 11, Issue 3-6, 2002, Pages 392-395

  Tucker, J B ^a   Mitra, S ^a   Papanicolaou, N ^b   Siripuram, A ^a   Rao, M V ^a   Holland, O W ^c  

^a Krasnow Institute for Advanced Study   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

^c OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

Annealing; Ion implantation; MESFET; SiC

Indexed keywords

ANNEALING; ION IMPLANTATION; MESFET DEVICES; NITROGEN; PHOSPHORUS; VOLUMETRIC ANALYSIS;

CHANNEL IMPLANTATION;

SILICON CARBIDE;

INSULATION; ION IMPLANTATION; NITROGEN; PHOSPHORUS; SEMICONDUCTOR; SILICON CARBIDE;

EID: 0036508096     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-9635(01)00610-0     Document Type: Article

References (8)