Avalanche phenomena in 4H-SiC p-n diodes fabricated by aluminum or boron implantation

IEEE Transactions on Electron Devices

Volumn 49, Issue 9, 2002, Pages 1505-1510

  Negoro, Yuuki ^b   Miyamoto, Nao ^b   Kimoto, Tsunenobu ^b   Matsunami, Hiroyuki ^a,b  

^a IEEE

^b KYOTO UNIVERSITY   (Japan)

Author keywords

Avalanche breakdown; Ion implantation; P n diode; SiC; Silicon carbide

Indexed keywords

ALUMINUM; ANNEALING; AVALANCHE DIODES; CAPACITANCE MEASUREMENT; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; ELECTRIC RESISTANCE MEASUREMENT; ION IMPLANTATION; LUMINESCENCE; SEMICONDUCTING BORON; SEMICONDUCTOR JUNCTIONS;

AVALANCHE BREAKDOWN; FORWARD VOLTAGE; LEAKAGE CURRENT DENSITY; REVERSE VOLTAGE;

SILICON CARBIDE;

EID: 0036712432     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2002.802637     Document Type: Article

References (18)

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