Optimisation of implanted guard-ring terminations in 4H-SiC schottky diodes

Materials Science Forum

Volumn 389-393, Issue , 2002, Pages 1149-1152

  Horsfall, A B ^a   Vassilevski, K V ^a,b   Johnson, C M ^a   Wright, N G ^a   O'Neill, A G ^a   Gwilliam, R M ^c  

^a NEWCASTLE UNIVERSITY   (United Kingdom)

^b IOFFE INSTITUTE   (Russian Federation)

^c UNIVERSITY OF SURREY   (United Kingdom)

Author keywords

Breakdown; Guard rings; Implantation; Schottky diodes

Indexed keywords

DIODES; ION IMPLANTATION; LEAKAGE CURRENTS; SCHOTTKY BARRIER DIODES; BORON; CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; ELECTRIC CONTACTS; OPTIMIZATION; THERMAL EFFECTS;

4H-SIC SCHOTTKY DIODES; BREAKDOWN; CONTACT AREAS; GUARD-RINGS; HIGH TEMPERATURE; IMPLANTATION PROCESS; OPTIMISATIONS; SCHOTTKY DIODES; GUARD RING STRUCTURES;

SILICON CARBIDE;

EID: 0036430464     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.389-393.1149     Document Type: Conference Paper

References (5)

1. Sheridan, D.C., Niu, G., Merrett, J.N., Cressler, J.D., Ellis, C, Tin, C., Sol. Stat. Elec., 44. (2000), p1367
2. Saks, N.S., Agarwal, A.K,. Ryu, S-H. Palmour, J.W., J. App. Phys., 90, (2001), p2796
3. Rhoderick, E.H., Williams, R.H., in ‘Metal Semiconductor Contacts' Second Edition, Oxford Science Publications, 1988
4. Itoh, A., Matsunami, H., in SiC: a review of fundamental questions and applications to current device technology’, Eds. Choyke, W J., Matsunami, H.. Pcnsl, CJ., Vol. 2, Akadamie Verlag, p 389
5. Lebedev, A.A., Semiconductors. 33, (1999), p107