Suppression of macrostep formation in 4H-SiC using a cap oxide layer

Materials Science Forum

Volumn 389-393, Issue , 2002, Pages 862-866

  Bahng, Wook ^a   Kim, Nam Kyun ^a   Kim, Sang Cheol ^a   Song, Geun Ho ^a   Kim, Eun Dong ^a  

^a Korea Electrotechnology Research Institute (KERI)   (South Korea)

Author keywords

Activation anneal; Cap oxide; Ion implantation; Macrosteps; SiC

Indexed keywords

ION IMPLANTATION; IONS; SEMICONDUCTOR DOPING; SILICA; SILICON CARBIDE; SILICON OXIDES; WIDE BAND GAP SEMICONDUCTORS; ANNEALING; ATOMIC FORCE MICROSCOPY; HIGH TEMPERATURE EFFECTS; OXIDATION; OXIDES; SECONDARY ION MASS SPECTROMETRY;

4H-SIC SUBSTRATE; ANNEALING TEMPERATURES; HIGH-TEMPERATURE ANNEAL; HIGH-TEMPERATURE ANNEALING; MACROSTEPS; OXIDE THICKNESS; THERMAL OXIDE LAYER; THICKNESS OF THE OXIDE LAYERS; MACROSTEP FORMATION;

SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE;

EID: 0036436575     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.389-393.863     Document Type: Conference Paper

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