A comparison of the AlN annealing cap for 4H-SiC annealed in nitrogen versus argon atmosphere

Solid-State Electronics

Volumn 48, Issue 10-11 SPEC. ISS., 2004, Pages 1867-1872

  Derenge, M A ^a   Jones, K A ^a   Kirchner, K W ^a   Ervin, M H ^a   Zheleva, T S ^a   Hullavarad, S ^b   Vispute, R D ^b  

^a U S ARMY RESEARCH LABORATORY   (United States)

^b UNIVERSITY OF MARYLAND   (United States)

Author keywords

AlN; Cap; High temperature anneal; Ion implantation; Macrostep; SiC; Step bunching; TEM; Thermodynamics; X ray

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; CRYSTAL ORIENTATION; DETERIORATION; ETCHING; EVAPORATION; HIGH TEMPERATURE EFFECTS; ION IMPLANTATION; PROTECTIVE COATINGS; SURFACE PROPERTIES; SURFACE ROUGHNESS; THERMODYNAMICS; TRANSMISSION ELECTRON MICROSCOPY;

CAP; HIGH TEMPERATURE ANNEALING; MACROSTEPS; STEP BUNCHING;

PULSED LASER DEPOSITION;

EID: 3142719110     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2004.05.079     Document Type: Conference Paper

References (10)

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