Post-Implantation annealing of aluminum in 6H-SiC

Materials Science Forum

Volumn 264-268, Issue PART 2, 1998, Pages 709-712

  Ottaviani, L ^a   Planson, D ^a   Locatelli, M L ^a   Chante, J P ^a   Canut, B ^b   Ramos, S ^b  

^a CNRS   (France)

^b UNIVERSITÉ LYON 1   (France)

Author keywords

Annealing Atmosphere; Ion Implantation; RBS Channeling; Surface Stoichiometry

Indexed keywords

ALUMINUM; ANNEALING; CHEMICAL REACTORS; CRYSTALLIZATION; EPITAXIAL GROWTH; HYDROGEN; ION IMPLANTATION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; STOICHIOMETRY; SURFACE STRUCTURE; X RAY PHOTOELECTRON SPECTROSCOPY;

SOLID PHASE EPITAXY;

SILICON CARBIDE;

EID: 0031648176     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Article

References (7)

1. J.F. Ziegler, J.P. Biersack, and U. Littmark, The Stopping and Range Ions in Solids (Pergamon, New York, 1985), Vol. I.
2. N.G. Chechenin, K.K. Bourdelle, A.V. Suvorov, and A.X. Kastilio-Vitloch, Nucl. Instr. And Meth. B65 (1992), p. 341.
3. B. Canut, S. Ramos, J.A. Roger, J.P. Chante, M.L. Locatelli, and D. Planson, Mater. Sci. Eng. B46 (1997), p. 267.
4. M. Ghezzo, D.M. Brown, E. Downey, J. Kretchmer, W. Hennessy, D.L. Polla, and H. Bakhru, IEEE Electron. Device Lett. 13 (1992), p. 639.
5. J.A. Spitznagel, S. Wood, W.J. Choyke, N.J. Doyle, J. Bradshaw, and S.G. Fishman, Nucl. Instr. And Meth. B16 (1986), p. 237.
6. V. Heera, J. Stoemenos, R. Kögler, and W. Skorupa, J. Appl. Phys. 77 (1995), p. 2999.
7. R. Fair, K.S. Jones and G.A. Rozgony, Rapid thermal processing : science and technology (Academic Press, San Diego, 1993).