Using a PLD BN/AlN composite as an annealing cap for ion implanted SiC

Solid-State Electronics

Volumn 47, Issue 2, 2003, Pages 253-257

  Ruppalt, L B ^a   Stafford, S ^a   Yuan, D ^a   Jones, K A ^b   Ervin, M H ^b   Kirchner, K W ^b   Zheleva, T S ^b   Wood, M C ^b   Geil, B R ^b   Forsythe, E ^b   Vispute, R D ^a   Venkatesan, T ^a  

^a Bldg 142   (United States)

^b U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

Aluminum nitride; Annealing cap; Boron nitride; Ion implantation; Silicon carbide

Indexed keywords

ALUMINUM NITRIDE; ANNEALING; BORON COMPOUNDS; ETCHING; HIGH TEMPERATURE OPERATIONS; ION IMPLANTATION; PULSED LASER DEPOSITION;

THERMAL COEFFICIENTS;

SILICON CARBIDE;

EID: 0037290297     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00203-4     Document Type: Conference Paper

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