1kV 4H-SiC JBS Rectifiers Fabricated Using an ALN Capped Anneal

Materials Science Forum

Volumn 433-436, Issue , 2003, Pages 843-846

  Zhu, Lin ^a   Shanbhag, Mayura ^a   Paul Chow, T ^a   Jones, Kenneth A ^b   Ervin, Matthew H ^b   Shah, Pankaj B ^b   Derenge, Michael A ^b   Vispute, R D ^c   Venkatesan, T ^c   Agarwal, Anant ^d  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^b U S ARMY RESEARCH LABORATORY   (United States)

^c Bldg 142   (United States)

^d Arkansas Power Electronics International Inc   (United States)

Author keywords

4H SiC; AlN; Anneal; Junction Barrier Schottky; Schottky Rectifier

Indexed keywords

ACTIVATION ENERGY; ALUMINUM NITRIDE; ANNEALING; ELECTRIC POTENTIAL; LEAKAGE CURRENTS; SILICON CARBIDE;

TURN-ON VOLTAGE;

SOLID STATE RECTIFIERS;

EID: 0242496502     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.433-436.843     Document Type: Conference Paper

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