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Volumn 70, Issue 11, 2004, Pages

InN dielectric function from the midinfrared to the ultraviolet range

Author keywords

[No Author keywords available]

Indexed keywords

INDIUM; NITROGEN DERIVATIVE;

EID: 19744381160     PISSN: 01631829     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevB.70.115217     Document Type: Article
Times cited : (46)

References (52)
  • 34
    • 0037451297 scopus 로고    scopus 로고
    • By means of Hall-effect and high-resolution electron-energy-loss spectroscopy measurements an intrinsic electron accumulation layer was observed at the InN surface recently [H. Lu, W. J. Schaff, L. F. Eastman, and C. E. Stutz, Appl. Phys. Lett. 82, 1736 (2003); I. Mahboob, T. D. Veal, C. F. McConville, H. Lu, and W. J. Schaff, Phys. Rev. Lett. 92, 036804 (2004)]. For our samples, the sensitivity of the mid-IR SE data to such an accumulation layer is however too low to yield reliable results, and the plasmon frequency obtained by SE is understood as an average value over the entire film.
    • (2003) Appl. Phys. Lett. , vol.82 , pp. 1736
    • Lu, H.1    Schaff, W.J.2    Eastman, L.F.3    Stutz, C.E.4
  • 35
    • 1442355676 scopus 로고    scopus 로고
    • By means of Hall-effect and high-resolution electron-energy-loss spectroscopy measurements an intrinsic electron accumulation layer was observed at the InN surface recently [H. Lu, W. J. Schaff, L. F. Eastman, and C. E. Stutz, Appl. Phys. Lett. 82, 1736 (2003); I. Mahboob, T. D. Veal, C. F. McConville, H. Lu, and W. J. Schaff, Phys. Rev. Lett. 92, 036804 (2004)]. For our samples, the sensitivity of the mid-IR SE data to such an accumulation layer is however too low to yield reliable results, and the plasmon frequency obtained by SE is understood as an average value over the entire film.
    • (2004) Phys. Rev. Lett. , vol.92 , pp. 036804
    • Mahboob, I.1    Veal, T.D.2    McConville, C.F.3    Lu, H.4    Schaff, W.J.5
  • 45
    • 85088490126 scopus 로고    scopus 로고
    • note
    • -1.
  • 46
    • 79956046454 scopus 로고    scopus 로고
    • The band-edge tailing is likely attributed to the carrier-phonon and the carrier-impurity interaction as well as structural disorder effects. See also, W. Z. Shen, L. F. Jiang, H. F. Yang, F. Y. Meng, H. Ogawa, and Q. X. Guo, Appl. Phys. Lett. 80, 2063 (2002).
    • (2002) Appl. Phys. Lett. , vol.80 , pp. 2063
    • Shen, W.Z.1    Jiang, L.F.2    Yang, H.F.3    Meng, F.Y.4    Ogawa, H.5    Guo, Q.X.6
  • 51
    • 9644263106 scopus 로고
    • V. V. Sobolev, S. G. Kroituru, A. F. Andreeva, and V. Ya. Malakhov, Fiz. Tekh. Poluprovodn. (S. Peterburg) 13, 823 (1979); Fiz. Tekh. Poluprovodn. (S.-Peterburg) 13, 485 (1979).
    • (1979) Fiz. Tekh. Poluprovodn. (S.-Peterburg) , vol.13 , pp. 485


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.