Disorder-activated infrared modes and surface depletion layer in highly Si-doped hexagonal GaN

Journal of Applied Physics

Volumn 89, Issue 7, 2001, Pages 3720-3724

  Kasic, A ^a   Schubert, M ^a,b   Kuhn, B ^c   Scholz, F ^c   Einfeldt, S ^d   Hommel, D ^d  

^a UNIVERSITY OF LEIPZIG   (Germany)

^b UNIVERSITY OF NEBRASKA LINCOLN   (United States)

^c UNIVERSITY OF STUTTGART   (Germany)

^d UNIVERSITY OF BREMEN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0035308399     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1344913     Document Type: Article

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