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Physica B: Condensed Matter

Volumn 318, Issue 2-3, 2002, Pages 180-187

Growth-dependent phonon characteristics in InN thin films

(5) Qian, Z G a Yu, G a Shen, W Z a Ogawa, H b Guo, Q X b

a SHANGHAI JIAO TONG UNIVERSITY (China)

b SAGA UNIVERSITY (Japan)

Author keywords

Growth dependence; InN thin films; Phonon characteristics

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; COMPRESSIVE STRESS; ENERGY GAP; FILM GROWTH; INFRARED SPECTROSCOPY; LIGHT REFLECTION; MAGNETRON SPUTTERING; METALLORGANIC VAPOR PHASE EPITAXY; PHONONS; RAMAN SPECTROSCOPY; RESIDUAL STRESSES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SPECTRUM ANALYSIS; X RAY DIFFRACTION ANALYSIS;

RAMAN MEASUREMENTS;

THIN FILMS;

EID: 0036609119 PISSN: 09214526 EISSN: None Source Type: Journal
DOI: 10.1016/S0921-4526(02)00569-0 Document Type: Article

Times cited : (25)

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