Phonon structure of InN grown by atomic layer epitaxy

Solid State Communications

Volumn 110, Issue 9, 1999, Pages 491-495

  Inushima, T ^a   Shiraishi, T ^a   Davydov, V Yu ^b  

^a TOKAI UNIVERSITY   (Japan)

^b IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; EPITAXIAL GROWTH; LIGHT SCATTERING; PERMITTIVITY; PHONONS; RAMAN SPECTROSCOPY; SAPPHIRE; SEMICONDUCTOR GROWTH; SINGLE CRYSTALS; SUBSTRATES;

INDIUM NITRIDE;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0032630354     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(99)00108-8     Document Type: Article

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